IXGH28N60BD1 diode equivalent, low vce(sat) igbt with diode.
* International standard packages
* IGBT and anti-parallel FRED in one package
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on .
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ.
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